(Product name)_G0_00_PSpice_revX.lib G0 model library file for PSpice If you unpack it, you will find a total of four files in the unpacking folder: library files and symbol files for G0 and G2 model each. If you select the desired model and click here, the zip file with the following name will be downloaded.įor PSpice model: (product name)_PSpice_(registration date).zipįor LTspice models: (product name)_LTspice_(registration date).zip Fossum’, Lixin Ge, and Keunwoo Kim at the University of Florida, March, 1999.G0 and G2 models can be downloaded from above linkage destination. This connection was first pointed out to me in discussions with Professor J.G. Fossum, “A Physical Short-Channel Model for the Thin-Film SOI MOSFET Applicable to Device and Circuit CAD,” IEEE Trans. Gibbons, “Fabrication and Analysis of Deep Submicron Strained-Si N-MOSFET’s,” IEEE Trans. Mizuno, “Nonstationary electron/hole transport in Sub-0.1mm MOS devices: Correlation with mobility and low power CMOS application,” IEEE Trans. Antoniadis, “Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress,” IEEE Electron Dev. Mark Lundstrom, “On the Mobility Versus Drain Current Relation for a Nanoscale MOSFET,” IEEE Electron Dev. Price, “Monte Carlo calculation of electron transport in solids,” Semiconductors and Semimetals, 14, pp. Shockley, “Diffusion and drift of minority carrier in semiconductors for comparable capture and scattering mean free paths,” Phys. Brody, “Alternative approach to the solution of added carrier transport problems in semiconductors,” Phys. Rhoderick, Metal-Semiconductor Contacts, Clarendon Press, Oxford, UK, 1978. Lundstrom, Fundamentals of Carrier Transport, 2 nd Ed., Cambridge University Press, Cambridge, UK, 2000.Į.H. Lundstrom, “Elementary scattering theory of the MOSFET,” IEEE Electron Dev. Pierret, Advanced Semiconductor Fundamentals, Addision-Wesley, Reading, Massachusetts, 1987.Īnisur Rahman and Mark Lundstrom, “A Compact Model for the Nanoscale Double Gate MOSFET,” IEEE Trans. Govindan, “The role of scattering in nanotransistors,” IEEE Trans. Lundstrom, “A Simple Quantum Mechanical Treatment of Scattering in Nanoscale Transistors,” J.
Mark Lundstrom and Zhibin Ren, “Essential Physics of Carrier Transport in Nanoscale MOSFETs,” IEEE Trans. Lundstrom, “Examination of design and manufacturing issues in a 10 nm Double Gate MOSFET using Nonequilibrium Green’s Function Simulation,” IEDM Tech. Fossum, “The ballistic nanotransistor: A simulation study,” IEDM Tech. Antoniadis, “On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?, IEEE Electron Dev. Bendix, “Performance limits of Si MOSFET’s,” IEDM Tech.
0 kommentar(er)
